PART |
Description |
Maker |
GLT6200L16LI-70FG GLT6200L16LI-85TC GLT6200L16LI-5 |
70ns; Ultra low power 128K x 16 CMOS SRAM 85ns; Ultra low power 128K x 16 CMOS SRAM 55ns; Ultra low power 128K x 16 CMOS SRAM
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G-LINK Technology
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V62C2162048L V62C2162048L-100B V62C2162048L-100T V |
PC123X5YUP0F 128K的超低功耗16 CMOS SRAM Ultra Low Power 128K x 16 CMOS SRAM
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Mosel Vitelic, Corp. MOSEL[Mosel Vitelic Corp] Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
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BS616UV2019TIP10 BS616UV2019TI85 BS616UV2019TCP85 |
Ultra Low Power CMOS SRAM 128K X 16 bit
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Brilliance Semiconductor Brilliance Semiconducto...
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N02L163WN1A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
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NanoAmp Solutions
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N02L163WC2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16 bit
|
NanoAmp Solutions
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IC62VV12816LL IC62VV12816L IC62VV12816L-70B IC62VV |
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 128Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 70ns; 1.8V; 128K x 16 ultra low power CMOS static RAM
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ICSI[Integrated Circuit Solution Inc]
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AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85 High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
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ALLIANCE MEMORY INC ALSC[Alliance Semiconductor Corporation] ETC[ETC] Alliance Semiconductor, Corp.
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P4C1023-55CC P4C1023-55CI P4C1023-55CJC P4C1023-55 |
LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, CDIP32 LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, CDSO32 LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM 128K X 8 STANDARD SRAM, 55 ns, CDIP32
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Pyramid Semiconductor C... Pyramid Semiconductor Corporation Pyramid Semiconductor, Corp.
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UT62L12816 UT62L12816BS-55LI UT62L12816BS-55LLI UT |
128K x 16 BIT LOW POWER CMOS SRAM 128K的16位低功耗CMOS SRAM
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Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
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K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
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BS616LV2015 BS616LV2015TI BS616LV2015AC BS616LV201 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit Plug-In Relay; Contacts:SPST-NO; Contact Carry Current:30A; Coil Voltage AC Max:24V; Relay Mounting:Plug-In; Relay Terminals:Screw; Coil Resistance:11.5ohm; Coil Power VAC:9.5VA RoHS Compliant: Yes 非常低功电压CMOS SRAM28K的16 Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
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